ISSN : 2319-7323


Open Access


Title : Built-in self-repair (BISR) technique widely Used to repair embedded random access memories (RAMs)
Issue Date : September 2012
Abstract : With the trend of SOC technology, high density and high capacity embedded memories are required for successful implementation of the system. In modern SOCs, embedded memories occupy the largest part of the chip area and include an even larger amount of active devices. As memories are designed very tightly to the limits of the technology, they are more prone to failures than logic. Thus, memories concentrate the large majority of defects. That is, RAMs have more serious problems of yield and reliability. Keeping the memory cores at a reasonable yield level is thus vital for SOC products. As a matter, Built-In Self-Repair is gaining importance. Built-in self-repair (BISR) technique has been widely used to repair embedded random access memories (RAMs). If each repairable RAM uses one self contained BISR circuit (Dedicated BISR scheme), then the area cost of BISR circuits in an SOC becomes high. This, results in converse effect in the yield of RAMs. This paper presents a reconfigurable BISR (ReBISR) scheme for repairing RAMs with different sizes and redundancy organizations. An efficient redundancy analysis algorithm is proposed to allocate redundancies of defective RAMs. In the ReBISR, a reconfigurable built-in redundancy analysis (ReBIRA) circuit is designed to perform the redundancy algorithm for various RAMs. The ReBISR structure has been synthesized and found that the area cost when compared with the Dedicated BISR structure is very small. This paper is implemented using Verilog HDL. Simulation and Synthesis is done using ModelSim and Xilinx ISE 12.4 Tools.
Page(s) : 42-60
ISSN : 2319-7323
Source : Vol. 1, No.1